Cut a) and top view b) of the structure of an MPS-Diode. In b) Black:... | Download Scientific Diagram
Advantages of the 1200V SiC Schottky Diode with MPS Design - Electronics Maker
Avalanche Ruggedness of SiC MPS Diodes Under Repetitive Unclamped-Inductive-Switching Stress - Technical Articles
Reverse Characteristic Model of SiC MPS Diode | SpringerLink
4.4.3.1 MPS Diode Structure
Advantages of the 1200 V SiC Schottky Diode with MPS Design - Technical Articles
Parameter extraction method for a physics‐based lumped‐charge SiC MPS diode model - Li - 2020 - IET Power Electronics - Wiley Online Library
Parameter extraction method for a physics‐based lumped‐charge SiC MPS diode model - Li - 2020 - IET Power Electronics - Wiley Online Library
1200-V 4H-SiC Merged p-i-n Schottky Diodes With High Avalanche Capability
Figure 1 from Ultrahigh-Voltage SiC MPS Diodes With Hybrid Unipolar/Bipolar Operation | Semantic Scholar
SiC Schottky Diode Device Design: Characterizing Performance & Reliability
1.2-kV 4H-SiC Merged PiN Schottky Diode With Improved Surge Current Capability
4.4.3.2 MPS Diode Simulation
Figure 1 from Comparative study of contact topographies of 4.5kV SiC MPS diodes for optimizing the forward characteristics | Semantic Scholar
The Wolfspeed MPS Diode Advantage - YouTube
GC20MPS12-247 - Genesic Semiconductor - Silicon Carbide Schottky Diode, MPS Series, Single
Device Design Assessment of GaN Merged P-i-N Schottky Diodes
Figure 2 from Ultrahigh-Voltage SiC MPS Diodes With Hybrid Unipolar/Bipolar Operation | Semantic Scholar
Electrical and photoresponse properties of CoSO4-PVP interlayer based MPS diodes | SpringerLink
Design and Optimization of Silicon Carbide Schottky Diodes - Power Electronics News
Improved JBS structure to reduce the leakage current and increase the surge current capability | Toshiba Electronic Devices & Storage Corporation | Asia-English
Control of pn-junction turn-on voltage in 4H-SiC merged PiN Schottky diode
Ruggedness of 1200 V SiC MPS diodes - ScienceDirect
A New 1200V SiC MPS Diode with Improved Performance and Ruggedness | Scientific.Net
Advantages of the 1200 V SiC Schottky Diode with MPS Design
